Quantum Dash-based Vertical-External-Cavity Surface-Emitting Laser on InP - Archive ouverte HAL
Poster De Conférence Année : 2017

Quantum Dash-based Vertical-External-Cavity Surface-Emitting Laser on InP

Cyril Hamel
Mehdi Alouini

Résumé

An Optically-Pumped InAs Quantum Dash-based Vertical-External-Cavity Surface-Emitting Laser (OP-QDH-VECSEL) on InP is demonstrated. In multi-mode operation, the device emits up to 163 mW at T=20°C (pump limited) in the 1615-1628 nm wavelength range. When forced to oscillate in the single-frequency regime, it shows a maximum output power of 7.9 mW at 1610 nm, for a T=19.5°C. The emitted light is linearly polarized along the QDH growth direction ([1-10] crystallographic axis). The single-frequency linewidth of the OP-QDH-VECSEL has been estimated to 22 kHz, for a cavity length of 49 mm.
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Dates et versions

hal-01532477 , version 1 (02-06-2017)

Identifiants

  • HAL Id : hal-01532477 , version 1

Citer

Salvatore Pes, Christophe Levallois, Cyril Paranthoen, Nicolas Chevalier, Cyril Hamel, et al.. Quantum Dash-based Vertical-External-Cavity Surface-Emitting Laser on InP. Compound Semiconductor Week 2017 (CSW 2017) - 29th International Conference on Indium Phosphide and Related Materials (IPRM 2017), May 2017, Berlin, Germany. . ⟨hal-01532477⟩
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