This paper deals with an overview of Silicon Carbide MOSFET-based power module failure modes and an experimental health-monitoring approach to detect them. The power module reliability question has recently emerged according to the development of converters in industrial fields such as: aerospace, automotive, traction… Nowadays, converters have a key role in the power transmission line. Besides, the power requirement of these converters is ever increasing. This constraint has pushed researchers into new technologies increasing the power density in converters which are increasingly more compact and lightweight. In our application, we use silicon carbide chips due to their better performance compared to other technologies. The interconnections and the materials have been adapted to the higher temperature range of a SiC chip. Despite optimization, the silicon carbide MOSFET-based power modules still present weaknesses and failures in use. The aim of this paper is to understand and moreover to highlight the power module physics of failure to trigger the most common failure types, to find a way to follow them. Finally, it presents a relevant test plan and the test circuits associated to trigger and study these expected failures.