Numerical simulation of C-V and I-V characteristics of perovskite based solar cells
Résumé
Compared with the almost long-time stuck power conversion efficiency of silicon
photovoltaics, halide perovskites materials are today among the most promising lowcost
candidates for solar power conversion due to their impressive efficiency increase
over the last few years, starting from 3.8% (2009) to over 22.1.0% (2016) , very
close to the research record of traditional silicon based solar cells (25.0%). Hence, they
attract a huge interest, but nevertheless, for further improvement of the electrical
and optical characteristics of the perovskite based solar cell, a deep understanding of the
device physics, including band alignment, charge carrier traps and interfaces properties
deserves consideration.
In order to give a physical insight into the solar cell operation, a numerical simulation,
using Silvaco-Atlas software, coupled with carriers drift and diffusion model and
Poisson equation is proposed in our work. In addition to the current density versus
voltage characteristic (JV) in dark or under AM1.5 sun illumination, the simulation of
the capacitance versus voltage characteristic (CV) is performed and compared to
experimental data. A realistic band diagram of the device is presented, and the effect of
bulk and interface traps is studied. Moreover, the solutions for further efficiency
enhancement are discussed.