First-ever test and characterization of the AMS standard bulk 0.35 μm CMOS technology at sub-kelvin temperatures - Archive ouverte HAL
Communication Dans Un Congrès Année : 2016

First-ever test and characterization of the AMS standard bulk 0.35 μm CMOS technology at sub-kelvin temperatures

Résumé

From medical imaging to particle physics passing, among others, by space applications, integrated readout electronics (ICs) in CMOS technologies are often adopted. When a high sensitivity and a low noise level are required, cooling of detectors and readout electronics is the recommended solution. To maintain a constant cooling temperature, they very often operate at nitrogen and helium-4 liquids temperatures, respectively 77 K and 4.2 K. At these temperatures, Spice parameters of MOSFET transistors may be found in the literature. However, their performances at sub-kelvin temperatures remain unknown because of a lack in scientific publications thereupon. CEA Astrophysics division's focal plane arrays-based bolometers are cooled at 0.1 K. The front-end electronics also. However, a CMOS technology was characterized for the first time at sub-kelvin temperatures. It is shown by measured n and p channel transistors' I-V that the AMS 0.35 μm standard bulk CMOS technology, is still performing at 0.1 K. Despite some specific effects on silicon behaviour at cryogenic temperatures, performances are very satisfactory.

Dates et versions

hal-01519841 , version 1 (09-05-2017)

Identifiants

Citer

Amine Rhouni, Olivier Gevin, Xavier de La Broïse, Jean-Luc Sauvageot, Vincent Reveret, et al.. First-ever test and characterization of the AMS standard bulk 0.35 μm CMOS technology at sub-kelvin temperatures . 12th International Workshop on Low Temperature Electronics , Sep 2016, Tempe, United States. ⟨10.1088/1742-6596/834/1/012005⟩. ⟨hal-01519841⟩
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