Conducting strontium ruthenium oxide interface layers for application to PZT/SrRuO3/Metal thin film capacitors - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Ferroelectrics Année : 2003

Conducting strontium ruthenium oxide interface layers for application to PZT/SrRuO3/Metal thin film capacitors

Résumé

Ferroelectric lead zirconate titanate (PZT) thin films have been prepared by chemical solution deposition (CSD) and were spin-coated onto stainless steel substrates. In order to improve the ferroelectric properties, the influence of an additional layer of strontium ruthenium oxide (SrRuO3) at the interface between the perovskite type PZT and the metal substrate has been studied. The elaboration route of the SrRuO3 thin films by CSD and spin-coating is presented. The influence from the annealing temperature on the PZT crystallization behavior has been analyzed by X-ray diffraction, and the PZT coercive field and remanent polarization were investigated as a function of the SrRuO3 process parameters. The results are compared with those obtained for PZT/RuO2/metal thin film capacitors.
Fichier non déposé

Dates et versions

hal-01511977 , version 1 (21-04-2017)

Identifiants

Citer

Raynald Seveno, Adrien Braud, Hartmut Gundel. Conducting strontium ruthenium oxide interface layers for application to PZT/SrRuO3/Metal thin film capacitors. Ferroelectrics, 2003, ⟨10.1080/714040563⟩. ⟨hal-01511977⟩
87 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More