AlGaP-growth and doping by MBE - Archive ouverte HAL Accéder directement au contenu
Poster De Conférence Année : 2016

AlGaP-growth and doping by MBE

Résumé

Here, we study the growth of n‐ and p‐doped AlGaP alloys on GaP substrate, in view of their use in laser devices. The impact of growth temperature and growth rate on structural and electrical properties is studied with atomic force microscopy, C(V), Hall effect measurements, SIMS analysis and deep level transient spectroscopy (DLTS). Typical structural defects are identified and characterized. As a main result, it is found that doping of the AlGaP is disabled when the growth temperature is not high enough. This is evidenced by DLTS measurements that reveal deep level trapping.

Domaines

Matériaux
Fichier non déposé

Dates et versions

hal-01497057 , version 1 (28-03-2017)

Identifiants

  • HAL Id : hal-01497057 , version 1

Citer

Ronan Tremblay, Jean-Philippe Burin, Tony Rohel, Jean-Philippe Gauthier, Samy Almosni, et al.. AlGaP-growth and doping by MBE. 19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France. ⟨hal-01497057⟩
135 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More