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Poster De Conférence Année : 2016

GaAsPN Single and Tandem Solar Cells on Silicon

A. Fave
M. Lemiti

Résumé

The development of a III‐V on silicon tandem cell is reported. GaAsPN material is considered for top cell absorber because of its quasi‐lattice matching with silicon and its pseudo‐direct bandgap at 1.7 eV. First, GaAsPN single cells are grown on both GaP and Si substrates, and their electrical performances are compared. It is found that the performances of the cell are limited by the low carrier mobility induced by the use of dilute nitrides. Then the first‐stage development of a tandem photovoltaic solar cell is reported, including a tunnel junction (TJ) made of Si.

Domaines

Matériaux
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Dates et versions

hal-01496922 , version 1 (28-03-2017)

Identifiants

  • HAL Id : hal-01496922 , version 1

Citer

Mickael da Silva, Charles Cornet, Antoine Létoublon, Christophe Levallois, Alain Rolland, et al.. GaAsPN Single and Tandem Solar Cells on Silicon. 19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France. ⟨hal-01496922⟩
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