GaAsPN Absorbers Grown on GaP for Multijunction Solar Cells: Optical Absorption and Thermal Conductivity Properties
Résumé
Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP are investigated by optical absorption spectroscopy and photo‐thermal deflection spectroscopy (PDS). First, the strong dependence of optical absorption on As content is shown: with a maximum absorption coefficient of 38,000 cm‐1 below the GaP bandgap. Optical absorption and thermal conductivity of the samples are then evaluated for various growth and annealing conditions using PDS. The significantly positive impact of annealing on both properties is demonstrated. Thermal conductivity reached 4W/mK for the best sample. These results are promising for the development of absorbers in multijunction solar cells.