Tailoring second-order harmonic generation with crystal antiphase domains in GaP/Si - Archive ouverte HAL
Communication Dans Un Congrès Année : 2016

Tailoring second-order harmonic generation with crystal antiphase domains in GaP/Si

Résumé

GaP is a promising candidate for the development of integrated photonic functions on silicon, because of its quasi lattice‐matching with Si and its interesting χ(2) non‐linear properties. We present the realization of GaP‐based microdisks on Si substrates, and discuss their optical properties, especially the antiphase domains (APDs) impact on second‐order harmonic generation. We show that the relevant parameter is the average polarity of the crystal while the size of the APDs does not impact the non‐linear processes. The control of the APD annihilation with AlGaP markers is found to be a promising route towards nonlinearity engineering in Si‐integrated photonic devices.
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Dates et versions

hal-01496763 , version 1 (27-03-2017)

Identifiants

  • HAL Id : hal-01496763 , version 1

Citer

Pierre Guillemé, Charles Cornet, Maxime Vallet, Mounib Bahri, Ludovic Largeau, et al.. Tailoring second-order harmonic generation with crystal antiphase domains in GaP/Si. 19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France. ⟨hal-01496763⟩
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