Pinched hysteresis loop in defect-free ferroelectric materials - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2016

Pinched hysteresis loop in defect-free ferroelectric materials

Résumé

In addition to the single polarization-versus-electric field hysteresis loop that is characteristic of ferroelectrics and the double hysteresis loop that is known to occur in antiferroelectrics, a third kind of polarization-versus-electric field function has been reported in several systems. This third kind is commonly termed the " pinched " loop due to its unusual shape, and is typically believed to originate from the pinning of domain walls interacting with defects. Here, using an atomistic effective Hamiltonian scheme, we demonstrate that such a belief has to be broadened since our simulations also yield pinched loops in defect-free ferroelectric materials, as a result of the occurrence of intermediate modulated phases exhibiting an inhomogeneous dipolar pattern leading to the coexistence of both ferroelectric and antiferroelectric orders.
Fichier principal
Vignette du fichier
Pinched_hysteresis_loop-AcceptedVers.pdf (2.26 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-01496641 , version 1 (27-08-2020)

Identifiants

Citer

Bin Xu, Charles Paillard, B Dkhil, L Bellaiche. Pinched hysteresis loop in defect-free ferroelectric materials. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2016, 94, pp.140101 - 140101. ⟨10.1103/PhysRevB.94.140101⟩. ⟨hal-01496641⟩
128 Consultations
19 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More