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Article Dans Une Revue Nanoscale Année : 2016

GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell

Claude Botella
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Geneviève Grenet
Nicolas Chauvin
Michel Gendry
Jose Penuelas

Résumé

We propose an arsenic-capping/decapping method, allowing the growth of an epitaxial shell around the GaAs nanowire (NW) core which is exposed to an ambient atmosphere, and without the introduction of impurities. Self-catalyzed GaAs NW arrays were firstly grown on Si(111) substrates by solid-source molecular beam epitaxy. Aiming for protecting the active surface of the GaAs NW core, the arsenic-capping/decapping method has been applied. To validate the effect of this method, different core/shell NWs have been fabricated. Analyses highlight the benefit of the As capping-decapping method for further epitaxial shell growth: an epitaxial shell with a smooth surface is achieved in the case of As-capped–decapped GaAs NWs, comparable to the in situ grown GaAs/AlGaAs NWs. This As capping method opens a way for the epitaxial growth of heterogeneous material shells such as functional oxides using different reactors.
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Dates et versions

hal-01489104 , version 1 (14-03-2017)

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Xin Guan, Jeanne Becdelievre, A. Benali, Claude Botella, Geneviève Grenet, et al.. GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell. Nanoscale, 2016, 8, pp.15637. ⟨10.1039/C6NR04817J⟩. ⟨hal-01489104⟩
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