Structure and electronic properties of reactively RF magnetron sputtered ABO<sub>2</sub>N oxynitride thin films - Archive ouverte HAL
Communication Dans Un Congrès Année : 2016

Structure and electronic properties of reactively RF magnetron sputtered ABO2N oxynitride thin films

Vincent Laur

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Matériaux
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Dates et versions

hal-01457020 , version 1 (06-02-2017)

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  • HAL Id : hal-01457020 , version 1

Citer

Laurent Le Gendre, Claire Le Paven-Thivet, Florent Marlec, Ratiba Benzerga, Anthony Ferri, et al.. Structure and electronic properties of reactively RF magnetron sputtered ABO2N oxynitride thin films. 6th Workshop NIMS-UR1-CNRS-SG "Materials and Sustainable development: Issues and Challenges of the 21st century, Oct 2016, Fukuoka, Japan. pp.8. ⟨hal-01457020⟩
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