Self-consistent vertical transport calculations in Al(x)Ga1-xN/GaN based resonant tunneling diode - Archive ouverte HAL
Article Dans Une Revue Superlattices and Microstructures Année : 2016

Self-consistent vertical transport calculations in Al(x)Ga1-xN/GaN based resonant tunneling diode

A. Rached
  • Fonction : Auteur
A. Bhouri
  • Fonction : Auteur
H. Belmabrouk
  • Fonction : Auteur

Résumé

The formation of two-dimensional electron gases (2DEGs) at AlxGa1-xN/GaN hexagonal double-barriers (DB) resonant tunneling diodes (RTD) is investigated by numerical self consistent (SC) solutions of the coupled Schrodinger and Poisson equations. Spontaneous and piezoelectric effects across the material interfaces are rigorously taken into account. Conduction band profiles, band edges and corresponding envelope functions are calculated in the AlxGa1-xN/GaN structures and likened to those where no polarization effects are included. The combined effect of the polarization-induced bound charge and conduction band offsets between the hexagonal AIGaN and GaN results in the formation of 2DEGs on one side of the DB and a depletion region on the other side. Using the transfer matrix formalism, the vertical transport (J-V characteristics) in AlGaN/GaN RTDs is calculated with a fully SC calculation in the ballistic regime. Compared to standard calculations where the voltage drop along the structure is supposed to be linear, the SC method leads to strong quantitative changes in the J-V characteristics showing that the applied electric field varies significantly in the active region of the structure. The influences of the aluminum composition and the GaN(AlGaN) thickness layers on the evolution of the current characteristics are also self-consistently investigated and discussed. We show that the electrical characteristics are very sensitive to the potential barrier due to the interplay between the potential symmetry and the barrier height and width. More interestingly, we demonstrate that the figures of merit namely the peak-to-valley ratio (PVR) of GaN/AlGaN RTDs can be optimized by increasing the quantum well width. (C) 2015 Elsevier Ltd. All rights reserved.

Dates et versions

hal-01455019 , version 1 (03-02-2017)

Identifiants

Citer

A. Rached, A. Bhouri, S. Sakr, J. -L. Lazzari, H. Belmabrouk. Self-consistent vertical transport calculations in Al(x)Ga1-xN/GaN based resonant tunneling diode. Superlattices and Microstructures, 2016, 91, pp.37-50. ⟨10.1016/j.spmi.2015.12.035⟩. ⟨hal-01455019⟩
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