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Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2015

Giant tunnel-electron injection in nitrogen-doped graphene

Vincent Repain
Yann Tison
Yann Girard

Résumé

Scanning tunneling microscopy experiments have been performed to measure the local electron injection in nitrogen-doped graphene on SiC(000¯1) and were successfully compared to ab initio calculations. In graphene, a gaplike feature is measured around the Fermi level due to a phonon-mediated tunneling channel. At nitrogen sites, this feature vanishes due to an increase of the elastic channel that is allowed because of symmetry breaking induced by the nitrogen atoms. A large conductance enhancement by a factor of up to 500 was measured at the Fermi level by comparing local spectroscopy at nitrogen sites and at carbon sites. Nitrogen doping can therefore be proposed as a way to improve tunnel-electron injection in graphene.

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hal-01445703 , version 1 (05-03-2024)

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Jérôme Lagoute, Frédéric Joucken, Vincent Repain, Yann Tison, Cyril Chacon, et al.. Giant tunnel-electron injection in nitrogen-doped graphene. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2015, 91, pp.125442. ⟨10.1103/PhysRevB.91.125442⟩. ⟨hal-01445703⟩
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