The thermal stability of PdGe on Ge(100) was investigated by scanning electron microscopy, X-ray diffraction and atom probe tomography. The initial PdGe film agglomerates when heated at high temperature (>= 500 degrees C), forming spherical islands. This degradation is highly detrimental for PdGe ohmic contact fabrication in the Gebased nano-electronics technology. However, capping the Pd layer with W before Pd-Ge reaction increases the thermal stability of the PdGe film up to 600 degrees C. In addition, the PdGe texture is modified if the sample is heated during Pd deposition, increasing the thermal stability of PdGe up to 700 degrees C with the W cap. (C) 2016 Elsevier Ltd. All rights reserved.