Supersaturation state effect in diffusion induced Ge nanowires growth at high temperatures - Archive ouverte HAL
Article Dans Une Revue Journal of Crystal Growth Année : 2016

Supersaturation state effect in diffusion induced Ge nanowires growth at high temperatures

Résumé

We report on supersaturation state effect in diffusion-induced vapor-liquid-solid growth of Ge nanowires at high temperature. Our experimental investigation establishes that at T >= 550 degrees C the growth is hindered while the growth limitation is not resulted from a high value of the desorption rate. We demonstrate that the suppressed growth is a result of the droplets large chemical potential that inhibit the supersaturation state. This results either in a strong growth limitation due to a significant droplets enlargement or to a growth cessation. (C) 2015 Elsevier B.V. All rights reserved.
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Dates et versions

hal-01435218 , version 1 (13-01-2017)

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S. J. Rezvani, Luc Favre, F. Celegato, L. Boarino, Isabelle Berbezier, et al.. Supersaturation state effect in diffusion induced Ge nanowires growth at high temperatures. Journal of Crystal Growth, 2016, 436, pp.51-55. ⟨10.1016/j.jcrysgro.2015.11.029⟩. ⟨hal-01435218⟩
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