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Article Dans Une Revue Journal of Applied Physics Année : 2016

Comparison of junctionless and inversion-mode p-type metal-oxide-semiconductor field-effect transistors in presence of hole-phonon interactions

Résumé

Junctionless transistors are being considered as one of the alternatives to conventional metal-oxide field-effect transistors. In this work, it is then presented a simulation study of silicon double-gated p-type junctionless transistors compared with its inversion-mode counterpart. The quantum transport problem is solved within the non-equilibrium Green's function formalism, whereas holephonon interactions are tackled by means of the self-consistent Born approximation. Our findings show that junctionless transistors should perform as good as a conventional transistor only for ultra-thin channels, with the disadvantage of requiring higher supply voltages in thicker channel configurations. (C) 2016 AIP Publishing LLC.
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Dates et versions

hal-01435125 , version 1 (13-01-2017)

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Citer

E. Dib, H. Carrillo-Nunez, N. Cavassilas, M. Bescond. Comparison of junctionless and inversion-mode p-type metal-oxide-semiconductor field-effect transistors in presence of hole-phonon interactions. Journal of Applied Physics, 2016, 119 (4), ⟨10.1063/1.4940959⟩. ⟨hal-01435125⟩
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