Simulation Analysis of Bipolar Amplification in Independent-Gate FinFET and Multi-Channel NWFET Submitted to Heavy-Ion Irradiation - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2012

Simulation Analysis of Bipolar Amplification in Independent-Gate FinFET and Multi-Channel NWFET Submitted to Heavy-Ion Irradiation

Résumé

The response to heavy-ion irradiation of FinFET and Multi-Channel Nanowire MOSFET (MC-NWFET) operated with independent gates is investigated by 3-D numerical simulation. The bipolar amplification and charge collection of devices with independent gates are particularly investigated and compared to those of conventional devices having a single surrounding gate. We show that the independent-gate operation of both FinFET and MC-NWFET degrades the device immunity to heavy-ion irradiation.
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hal-01430090 , version 1 (09-01-2017)

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Daniela Munteanu, Jean-Luc Autran. Simulation Analysis of Bipolar Amplification in Independent-Gate FinFET and Multi-Channel NWFET Submitted to Heavy-Ion Irradiation. IEEE Transactions on Nuclear Science, 2012, 59 (6, 2), pp.3249-3257. ⟨10.1109/TNS.2012.2221740⟩. ⟨hal-01430090⟩
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