Simulation Analysis of Bipolar Amplification in Independent-Gate FinFET and Multi-Channel NWFET Submitted to Heavy-Ion Irradiation - Archive ouverte HAL
Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2012

Simulation Analysis of Bipolar Amplification in Independent-Gate FinFET and Multi-Channel NWFET Submitted to Heavy-Ion Irradiation

Résumé

The response to heavy-ion irradiation of FinFET and Multi-Channel Nanowire MOSFET (MC-NWFET) operated with independent gates is investigated by 3-D numerical simulation. The bipolar amplification and charge collection of devices with independent gates are particularly investigated and compared to those of conventional devices having a single surrounding gate. We show that the independent-gate operation of both FinFET and MC-NWFET degrades the device immunity to heavy-ion irradiation.

Domaines

Micro et nanotechnologies/Microélectronique

Daniela Munteanu  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-01430090

Soumis le : lundi 9 janvier 2017-14:57:27

Dernière modification le : lundi 10 juin 2024-16:58:03

Fichier non déposé

Dates et versions

hal-01430090 , version 1 (09-01-2017)

Identifiants

Citer

Daniela Munteanu, Jean-Luc Autran. Simulation Analysis of Bipolar Amplification in Independent-Gate FinFET and Multi-Channel NWFET Submitted to Heavy-Ion Irradiation. IEEE Transactions on Nuclear Science, 2012, 59 (6, 2), pp.3249-3257. ⟨10.1109/TNS.2012.2221740⟩. ⟨hal-01430090⟩

Exporter

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

UNIV-TLN CNRS UNIV-AMU IM2NP
80 Consultations
0 Téléchargements

Altmetric

Partager

More