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Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2012

Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs

Résumé

The interactions of thermal and low energy (<1 MeV) neutrons with natural boron-doped silicon has been investigated using Geant4 numerical simulations. The consequences of these interactions on the soft-error rate of 40 nm SRAM at ground level have been carefully analyzed and quantified from thermal neutron accelerated tests at LLB facility, real-time altitude measurements on the ASTEP platform and numerical simulation using a new version of the TIARA Monte-Carlo code (TIARA-G4) capable of taking into account a more accurate description of the SRAM geometry and the true isotopic composition of circuit materials from silicon to back-end-of-line levels.
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Dates et versions

hal-01430089 , version 1 (09-01-2017)

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Jean-Luc Autran, S. Serre, S. Semikh, Daniela Munteanu, G. Gasiot, et al.. Soft-Error Rate Induced by Thermal and Low Energy Neutrons in 40 nm SRAMs. IEEE Transactions on Nuclear Science, 2012, 59 (6, 1), pp.2658-2665. ⟨10.1109/TNS.2012.2222438⟩. ⟨hal-01430089⟩
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