Low-loss Ge-rich Si0.2 Ge0.8 waveguides for mid-infrared photonics
Résumé
We demonstrate low-loss Ge-rich Si0.2Ge0.8 waveguides on Si1-xGex (x from 0 to 0.79) graded substrates operating in the mid-infrared wavelength range, at λ = 4.6 µm. Propagation losses as low as (1.5 ± 0.5) dB/cm and (2 ± 0.5) dB/cm were measured for the quasi-TE and quasi–TM polarizations, respectively. Total coupling loss (input/output) of only 10 dB was found for waveguide widths larger than 7 µm due to a good fiber-waveguide mode matching. Near-field optical mode profiles measured at the output waveguide facet allowed to inspect the optical mode and precisely measure the modal effective area of each waveguide providing a good correlation between experiments and simulations. These results put forward the potential of low-index-contrast Si1-xGex waveguides with high Ge concentration as fundamental blocks for mid-infrared photonic integrated circuits.
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