Tunnel electroresistance through organic ferroelectrics
Résumé
Organic electronics is emerging for large-area applications such as photovoltaic cells, rollable
displays or electronic paper. Its future development and integration will require a simple,
low-power organic memory, that can be written, erased and readout electrically. Here we
demonstrate a non-volatile memory in which the ferroelectric polarisation state of an organic
tunnel barrier encodes the stored information and sets the readout tunnel current. We use
high-sensitivity piezoresponse force microscopy to show that films as thin as one or two
layers of ferroelectric poly(vinylidene fluoride) remain switchable with low voltages.
Submicron junctions based on these films display tunnel electroresistance reaching 1,000%
at room temperature that is driven by ferroelectric switching and explained by electrostatic
effects in a direct tunnelling regime. Our findings provide a path to develop low-cost,
large-scale arrays of organic ferroelectric tunnel junctions on silicon or flexible substrates.
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