An Ultra-Low Power Dual-Ring Factorial Delay Locked Loop in 28nm FD-SOI technology - Archive ouverte HAL
Communication Dans Un Congrès Année : 2016

An Ultra-Low Power Dual-Ring Factorial Delay Locked Loop in 28nm FD-SOI technology

Résumé

This paper introduces a technique for balancing input and output timing of factorial ring owing to achieving higher accuracy as well as reduction of counter delay and reference spurs. Besides, this design offers an 8-bit programmable counter for a more flexible frequency synthesizer. The initial objective was for generating a 2.5GHz signal. However, thanks to the wide tuning range of the Voltage Controlled Delay Elements (VCDEs), the system has output performance spreads from 1 to 3.5GHz. On full system simulation, the power consumption is approximately 150uW with power supply of 1V. The system was implemented on 28nm FD-SOI with verifications by full-system simulations at transistor level.
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Dates et versions

hal-01377965 , version 1 (08-10-2016)

Identifiants

  • HAL Id : hal-01377965 , version 1

Citer

Khoa Hoang Vu Xuan, Francois Rivet, Yann Deval. An Ultra-Low Power Dual-Ring Factorial Delay Locked Loop in 28nm FD-SOI technology. 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct 2016, Hangzhou, China. ⟨hal-01377965⟩
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