Contributions to dedicated gate driver circuitry for very high switching speed high temperature power devices
Résumé
Based on WBG power devices operating constraints, this paper analyses and presents developments and prototyping of dedicated high side control signal level shifters. Designs take into account temperature, propagation delay deviation and high dv/dt susceptibility to deliver a generic solution able to comply with new device constraints. If silicon technology remains today the unique reliable technical solution, the implementation of gate driver in this technology is becoming very challenging. Delay deviations, signal integrity (duty cycle duration and time location) of prototypes are characterized with respect to temperature as well as dv/dt immunity.