CMOS SOI gate driver with integrated optical supply and optical driving for fast power transistors
Résumé
This paper presents the design, characterization and implementation of a gate driver based on optical transfer of both, the gate driver supply and its control signal isolation for high side and very high switching speed power devices. Our technique is based on the full monolithic integration within the CMOS-SOI gate driver IC of the optical receivers for both functions, associated with signal and power conditioning and power device gate charge control sub systems. Design issues are presented based on Xfab, XT0.18 SOI process. Characterizations are analyzed to underline the effectiveness of the proposed approach in the context of high temperature and its immunity to extremely fast switching power devices.