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Communication Dans Un Congrès Année : 2010

1.54 μm InAs/InP p-type doped quantum-dash-based DFB lasers for isolator-free operation

Résumé

The tolerance to optical feedback of p-type doped InAs/InP quantum dash based DFB lasers is investigated. Optimized devices show a record -18 dB onset of coherence collapse compliant with 10 Gb/s Ethernet standard for isolator-free operation
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Dates et versions

hal-01333322 , version 1 (17-06-2016)

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Citer

Kamel Merghem, Sheherazade Azouigui, Qin Zou, Anthony Martinez, Nicolas Chimot, et al.. 1.54 μm InAs/InP p-type doped quantum-dash-based DFB lasers for isolator-free operation. ISLC 2010 : 22nd IEEE International Semiconductor Laser Conference, Sep 2010, Kyoto, Japan. pp.178 - 179, ⟨10.1109/ISLC.2010.5642654⟩. ⟨hal-01333322⟩
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