Quantitative analysis of porosity and transport properties by FIB-SEM 3D imaging of a solder based sintered silver for a new microelectronic component - Archive ouverte HAL
Article Dans Une Revue Journal of Electronic Materials Année : 2016

Quantitative analysis of porosity and transport properties by FIB-SEM 3D imaging of a solder based sintered silver for a new microelectronic component

Résumé

As part of development of a new assembly technology to achieve bonding for an innovative silicon carbide (SiC) power device used in harsh environments, the aim of this study is to compare two silver sintering profiles and then to define the best candidate for die attach material for this new component. To achieve this goal, the solder joints have been characterized in terms of porosity by determination of the morphological characteristics of the material heterogeneities and estimating their thermal and electrical transport properties. The three dimensional (3D) microstructure of sintered silver samples has been reconstructed using a focused ion beam scanning electron microscope (FIB-SEM) tomography technique. The sample preparation and the experimental milling and imaging parameters have been optimized in order to obtain a high quality of 3D reconstruction. Volume fractions and volumetric connectivity of the individual phases (silver and voids) have been determined. Effective thermal and electrical conductivities of the samples and the tortuosity of the silver phase have been also evaluated by solving the diffusive transport equation.
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Dates et versions

hal-01333197 , version 1 (16-06-2016)

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Wafaa Rmili, Nicolas Vivet, Sylvain Chupin, Tristan Le Bihan, Guenhael Le Quilliec, et al.. Quantitative analysis of porosity and transport properties by FIB-SEM 3D imaging of a solder based sintered silver for a new microelectronic component. Journal of Electronic Materials, 2016, 45 (4), pp.2242-2251. ⟨10.1007/s11664-015-4288-1⟩. ⟨hal-01333197⟩
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