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Strong electro-refractive effect in Ge/SiGe coupled quantum wells

Abstract

In this work we investigate the electro-refractive effect in Ge/SiGe coupled quantum wells. An effective index variation of 2.3 x 10-3 has been measured at 1.5 V bias in a planar waveguide, with an associated figure of merit V  L  of 0.046 Vcm.
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Dates and versions

hal-01322131 , version 1 (26-05-2016)

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  • HAL Id : hal-01322131 , version 1

Cite

Jacopo Frigerio, Vladyslav Vakarin, Papichaya Chaisakul, Marcello Ferretto, Daniel Chrastina, et al.. Strong electro-refractive effect in Ge/SiGe coupled quantum wells. 12th International Conference on Group IV Photonics - GFP , Aug 2015, Vancouver, Canada. ⟨hal-01322131⟩
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