Ge-rich silicon germanium as a new platform for optical interconnects on silicon - Archive ouverte HAL Access content directly
Conference Papers Year : 2016

Ge-rich silicon germanium as a new platform for optical interconnects on silicon

Abstract

We propose germanium-rich silicon-germanium (SiGe) as a new platform for optical interconnects. The platform viability is experimentally and theoretically investigated through the realization of main building blocks of passive circuitry. Germanium-rich Si 1-x Ge x guiding layer on a graded SiGe layer is used to experimentally show 12µm radius bends by light confinement tuning at a wavelength of 1550nm. As a next step, Mach Zehnder interferometer with 10 dB extinction ratio is demonstrated. High Ge content of the proposed platform allows the coupling with Ge-based active devices, relying on a high quality epitaxial growth. Hence, the integration on Silicon of high speed and low power consumption Ge-rich active components is possible, despite the high lattice mismatch between silicon and germanium.
Fichier principal
Vignette du fichier
Ge-rich silicon germanium on graded buffer as a new platform for optical interconnects on silicon-9891-21.pdf (490.95 Ko) Télécharger le fichier
Origin : Files produced by the author(s)
Loading...

Dates and versions

hal-01322121 , version 1 (27-05-2016)

Identifiers

Cite

Vladyslav Vakarin, Papichaya Chaisakul, Jacopo Frigerio, Andrea Ballabio, Xavier Le Roux, et al.. Ge-rich silicon germanium as a new platform for optical interconnects on silicon. SPIE Photonics Europe, Apr 2016, Bruxelles, Belgium. ⟨10.1117/12.2228731⟩. ⟨hal-01322121⟩
142 View
231 Download

Altmetric

Share

Gmail Facebook X LinkedIn More