Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes - Archive ouverte HAL Access content directly
Journal Articles Nanoscale Research Letters Year : 2015

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes


We report on the demonstration of substrate-freenanowire /polydimethylsiloxane (PDMS) membrane light emitting diodes (LEDs). Metal-organic vapor phase epitaxy (MOVPE)-grown InGaN/GaN core−shell nanowires were encapsulated into PDMS layer. After metal deposition to p-GaN, a thick PDMS cap layer was spin-coated and the membrane was manually peeled from the sapphire substrate, flipped upside down onto a steel holder, and transparent ITO contact to n-GaN was deposited. The fabricated LEDs demonstrate rectifying diode characteristics. For the electroluminescence (EL) measurements the samples were manually bonded using silver paint.The EL spectra measured at different applied voltages demonstrate a blue-shift with the current increase. This shift is explained by the current injection into the InGaN areas of the active region with different average Indium content.
Fichier principal
Vignette du fichier
CLEAN LAST VERSION 1609 Substrate-free InGaN_GaN Nanowire Light Emitting Diodes.pdf (678.58 Ko) Télécharger le fichier
Origin : Files produced by the author(s)

Dates and versions

hal-01320698 , version 1 (26-05-2016)



Vladimir Neplokh, Agnes Messanvi, Hezhi Zhang, François H. Julien, Andrey Babichev, et al.. Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes. Nanoscale Research Letters, 2015, ⟨10.1186/s11671-015-1143-5⟩. ⟨hal-01320698⟩
168 View
114 Download



Gmail Facebook Twitter LinkedIn More