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Communication Dans Un Congrès Année : 2002

Optical properties of group-III nitride based quantum wells and quantum boxes.

Pierre Lefebvre

Résumé

Quantum wells based on hexagonal group-III nitrides have numerous original properties. In particular, internal electric fields are present along the growth axis, reaching several MV/cm. The competition between radiative and nonradiative recombinations of electron-hole pairs in these novel nano-objects is analysed by measuring the time-resolved photoluminescencce of series of samples. The respective influences of electric fields and localisation of carriers, on the optical properties of lnGaN/GaN quantum wells, are unravelled. The scaling law observed for photoluminescence time decays and the giant coupling between LO phonons and elecrton-hole pairs are interpreted in terms of an original and efficient description of the mechanisms involved in optical recombinations.
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Dates et versions

hal-01316057 , version 1 (14-05-2016)

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Pierre Lefebvre. Optical properties of group-III nitride based quantum wells and quantum boxes.. 12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. , Jun 2002, Smolenice, Slovakia. pp.227 - 232 ⟨10.1109/SIM.2002.1242761⟩. ⟨hal-01316057⟩
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