Localization effects in InGaN/GaN wide quantum well structures grown on bulk GaN crystals. - Archive ouverte HAL Accéder directement au contenu
Poster De Conférence Année : 2006

Localization effects in InGaN/GaN wide quantum well structures grown on bulk GaN crystals.

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hal-01309942 , version 1 (01-05-2016)

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  • HAL Id : hal-01309942 , version 1

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Robert Czernecki, Piotr Perlin, G. Franssen, T. Swietlik, J. Borysiuk, et al.. Localization effects in InGaN/GaN wide quantum well structures grown on bulk GaN crystals.. 6th International Conference on Nitride Semiconductors (ICNS6). , Aug 2006, Brème, Germany. . ⟨hal-01309942⟩
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