Deep-UV nitride-on-silicon microdisk lasers - Archive ouverte HAL Access content directly
Journal Articles Scientific Reports Year : 2016

Deep-UV nitride-on-silicon microdisk lasers

Abstract

Deep ultra-violet semiconductor lasers have numerous applications for optical storage and biochemistry. Many strategies based on nitride heterostructures and adapted substrates have been investigated to develop efficient active layers in this spectral range, starting with AlGaN quantum wells on AlN substrates and more recently sapphire and SiC substrates. Here we report an efficient and simple solution relying on binary GaN/AlN quantum wells grown on a thin AlN buffer layer on a silicon substrate. This active region is embedded in microdisk photonic resonators of high quality factors and allows the demonstration of a deep ultra-violet microlaser operating at 275 nm at room temperature under optical pumping, with a spontaneous emission coupling factor $\beta=(4±2) 10^{-4}$. The ability of the active layer to be released from the silicon substrate and to be grown on silicon-on-insulator substrates opens the way to future developments of nitride nanophotonic platforms on silicon.
Fichier principal
Vignette du fichier
srep21650.pdf (1.64 Mo) Télécharger le fichier
Origin Publisher files allowed on an open archive

Dates and versions

hal-01308209 , version 1 (02-06-2021)

Licence

Identifiers

Cite

Julien Selles, Christelle Brimont, Guillaume Cassabois, Pierre Valvin, Thierry Guillet, et al.. Deep-UV nitride-on-silicon microdisk lasers. Scientific Reports, 2016, 6, pp.21650. ⟨10.1038/srep21650⟩. ⟨hal-01308209⟩
205 View
53 Download

Altmetric

Share

Gmail Mastodon Facebook X LinkedIn More