Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation. - Archive ouverte HAL Access content directly
Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2003

Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation.

Abstract

The time dependence of the photoluminescence of GaN/AlN quantum dots (QD’s) after high photoexcitation is examined on a large time scale. A continuous change in energy peak is reported, resulting in a giant energy shift of more than 1 eV after delays of several hundreds of microseconds. Simultaneously, the intensity decreases over more than seven orders of magnitude with a complex dynamics. These results are explained by the screening of the internal electric field due to the accumulation of electron-hole pairs in the dots. The dynamics can be qualitatively described by considering the change of the squared overlap integral and the effect of the number of the electron-hole pairs in the QD itself on the radiative lifetime.
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hal-01303926 , version 1 (18-04-2016)

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Thierry Bretagnon, Sokratis Kalliakos, Pierre Lefebvre, Pierre Valvin, Bernard Gil, et al.. Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68 (20), pp.205301. ⟨10.1103/PhysRevB.68.205301⟩. ⟨hal-01303926⟩
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