Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy. - Archive ouverte HAL Access content directly
Journal Articles Solid State Communications Year : 2001

Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy.

Abstract

We have grown GaN films and GaN–AlGaN quantum wells (QWs) on homoepitaxial substrates, by molecular beam epitaxy using ammonia. Both the GaN film and the QW are found to have superior excitonic recombination properties which are extremely promising for the development of indium free ultra-violet lasers based on nitrides.

Dates and versions

hal-01302922 , version 1 (15-04-2016)

Identifiers

Cite

Thierry Taliercio, Mathieu Gallart, Pierre Lefebvre, Aurélien Morel, Bernard Gil, et al.. Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy.. Solid State Communications, 2001, 117 (7), pp.445. ⟨10.1016/S0038-1098(00)00475-0⟩. ⟨hal-01302922⟩
116 View
0 Download

Altmetric

Share

Gmail Mastodon Facebook X LinkedIn More