RBS-channeling and EPR studies of damage in 2 MeV Al2+-implanted 6H-SiC substrates - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2005

RBS-channeling and EPR studies of damage in 2 MeV Al2+-implanted 6H-SiC substrates

A Morilla
  • Fonction : Auteur
Jg Lopez
  • Fonction : Auteur
G Battistig
  • Fonction : Auteur
Jc Cheang-Wong
  • Fonction : Auteur
Ma Respaldiza
  • Fonction : Auteur

Résumé

6H-SiC single crystalline substrates were implanted at room temperature with 2 MeV Al2+ ions to fluences from 2x10(14) Al-2, cm(-2) to 7x10(14) Al2+ cm(-2) and with different current densities (from 6.6 to 33x10(10) Al2+ cm(-2) s(-1)). The depth profile of the damage induced by the Al2+ ions was determined by Backscattering Spectrometry in channeling geometry (BS/C) with a 3.5 MeV He2+ beam. The BS/C spectra were evaluated using the RBX. code. The samples were subsequently annealed at 1100° C in N-2 for one hour, in order to analyze their structural recovery by BS/C and the amount of the remaining defects by means of Electron Paramagnetic Resonance (EPR). The results from the BS/C spectra corresponding to the as-implanted samples indicate that the damage depends strongly on the total fluence but also, although to a lesser extent, on the beam current density. The BS/C measurements reveal that all the samples, except the one implanted with the highest fluence, recover completely their original crystalline structure after the annealing. Furthermore the angular anisotropy of the EPR spectra indicates that the implanted region recovered a good crystallinity, although some residual defects were observed.
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Dates et versions

hal-01288836 , version 1 (15-03-2016)

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  • HAL Id : hal-01288836 , version 1

Citer

A Morilla, Jg Lopez, G Battistig, Jean-Louis Cantin, Jc Cheang-Wong, et al.. RBS-channeling and EPR studies of damage in 2 MeV Al2+-implanted 6H-SiC substrates. 5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna, Unknown Region. pp.291-294. ⟨hal-01288836⟩
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