Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H-2) at temperatures, T-s, varying from 200° C to 600° C has been used to grow SiC thin films. We report on the influence of T-s on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the C-12(d,p(0))C-13 nuclear reaction and elastic recoil detection analysis (ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As T-s is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.