Energy dependence of the electron-hole in-plane anisotropy in InAs/GaAs quantum dots - Archive ouverte HAL
Communication Dans Un Congrès Année : 2006

Energy dependence of the electron-hole in-plane anisotropy in InAs/GaAs quantum dots

Emmanuel Aubry
  • Fonction : Auteur
M. Chaouache
  • Fonction : Auteur
M. Maaref
  • Fonction : Auteur
J. -M. Gerard
  • Fonction : Auteur
R. Ferreira
  • Fonction : Auteur

Résumé

In pump-probe experiments, we measured the anisotropic exchange energy splitting of the low-lying electron-hole pair states in an ensemble of as-grown InAs/GaAs self-assembled quantum dots. This splitting shows a monotonic decrease with the energy of interband emission. We discuss this result considering different parameters: shape anisotropy, wavefunction confinement, size of the quantum dots, and piezoelectric effect. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dates et versions

hal-01288176 , version 1 (14-03-2016)

Identifiants

Citer

Christophe Testelin, Emmanuel Aubry, M. Chaouache, M. Maaref, Frédéric Bernardot, et al.. Energy dependence of the electron-hole in-plane anisotropy in InAs/GaAs quantum dots. 4th International Conference on Semiconductor Quantum Dots (QD 2006), May 2006, Chamonix Mont Blanc, Unknown Region. pp.3900-3903, ⟨10.1002/pssc.200671604⟩. ⟨hal-01288176⟩
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