Quenching of the electronic spin relaxation and decoherence by localization on donors - Archive ouverte HAL
Communication Dans Un Congrès Année : 2007

Quenching of the electronic spin relaxation and decoherence by localization on donors

Résumé

In pump-probe experiments, we compare the spin relaxation and decoherence times of electrons bound on neutral donors inside an intrinsic CdTe quantum well (QW), with those of free electrons in a doped CdTe QW. We demonstrate that the localization of the electrons on donors, slows down the spin relaxation and the spin decoherence by two orders of magnitude.
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Dates et versions

hal-01288164 , version 1 (14-03-2016)

Identifiants

  • HAL Id : hal-01288164 , version 1

Citer

G. Karczewski, J. Tribollet, Frédéric Bernardot, Christophe Testelin, Maria Chamarro, et al.. Quenching of the electronic spin relaxation and decoherence by localization on donors. 28th International Conference on the Physics of Semiconductors (ICPS-28), Jul 2006, Vienna, Unknown Region. pp.1323-1324. ⟨hal-01288164⟩
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