Enhancement of the electron spin memory by localization on donors in a CdTe quantum well
Résumé
We present easily reproducible experimental conditions giving rise to a long electron spin memory at low temperature. The proposed system consists of an electron localized by a donor potential, and immerged in a quantum well. We have measured, by using photoinduced Faraday rotation technique, the spin relaxation time of electrons localized on iodine donors placed at the middle of a 80 A CdTe quantum well, and we have obtained 20 ns; this spin relaxation time is two orders of magnitude longer than for free electrons in a similar CdTe quantum well [J. Tribollet , Phys. Rev. B 68, 235316 (2003)].