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Article Dans Une Revue Journal of Applied Physics Année : 2014

Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer

Résumé

We report a first principles theoretical investigation of spin polarized quantum transport in Mn2Ga/MgO/Mn2Ga and Mn3Ga/MgO/Mn3Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn2Ga-based MTJs, however, only a 5% TMR ratio for Mn3Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn2Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn2Ga/MgO/Mn2Ga MTJ can be improved by inserting Co layer.
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Dates et versions

hal-01282856 , version 1 (04-03-2016)

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S. H. Liang, L. L. Tao, D. P. Liu, Yuan Lu, X. F. Han. Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer. Journal of Applied Physics, 2014, 115 (13), ⟨10.1063/1.4868973⟩. ⟨hal-01282856⟩
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