Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y2O2S : Er,Yb luminophor - Archive ouverte HAL
Article Dans Une Revue Fizika i tekhnika poluprovodnicov / Semiconductors Année : 2008

Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y2O2S : Er,Yb luminophor

Résumé

Y2O2S luminophors doped with Er3+ and Yb3+ ions are produced by means of solid-phase synthesis and deposited onto standard AL123A infrared light-emitting diodes. When excited with 940 nm radiation from a lioht-emittin-diode, the structures exhibit intense visible up-conversion luminescence. A maximal brightness of 2340 cd/m(2) of green and red up-conversion luminescence at corresponding wavelengths around 550 and 600 nm is observed for the Y2O2S compound doped with 2 at % Er3+ ions and 6 at % Yb3+ ions. The ratio of the intensity of green (or red) up-conversion luminescence to the intensity of infrared Stokes luminescence increases with increasing applied voltage. The efficiency of visible emission of the light-emitting diode structures is eta = 1.2 lm/W at an applied voltage of 1.5 V.

Dates et versions

hal-01281534 , version 1 (02-03-2016)

Identifiants

Citer

A. N. Gruzintsev, C. Barthou, P. Benalloul. Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y2O2S : Er,Yb luminophor. Fizika i tekhnika poluprovodnicov / Semiconductors, 2008, 42 (3), pp.358-362. ⟨10.1134/S1063782608030226⟩. ⟨hal-01281534⟩
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