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Article Dans Une Revue Physica E: Low-dimensional Systems and Nanostructures Année : 2007

Study of the interface Si-nc/SiO2 by infrared spectroscopic ellipsometry and X-ray photoelectron spectroscopy

I. Stenger
L. Siozade
  • Fonction : Auteur
S. Fisson
  • Fonction : Auteur
G. Vuye
  • Fonction : Auteur

Résumé

SiOx films (1 < x < 2), 0.5 mu m thick, have been elaborated by electron-gun evaporation. A thermal annealing of these films induced a phase separation leading to the formation of Si nanocrystals embedded in a SiO2 matrix. These films have been studied by infrared spectroscopic ellipsometry and by X-ray photoelectron spectroscopy (XPS). The effective dielectric function of the thin films has been extracted in the 600-5000 cm(-1) range which allowed us to deduce the dielectric function of the matrix surrounding the Si-nc. A study of the Transverse Optical (TO) vibration mode has revealed the presence of SiOx into the matrix. Before XPS measurements, the films have been etched in fluorhydric acid to remove the superficial SiO2 layer formed during air exposure. The Si 2p core-level emission has been recorded. The decomposition of the Si 2p peak into contributions of the usual five tetrahedrons Si-(Si4-nOn) (n = 0-4) has also revealed the presence of a SiOx phase. Consistency between infra-red and XPS results is discussed. (C) 2007 Elsevier B.V. All rights reserved.

Dates et versions

hal-01281492 , version 1 (02-03-2016)

Identifiants

Citer

I. Stenger, Bruno Gallas, L. Siozade, S. Fisson, G. Vuye, et al.. Study of the interface Si-nc/SiO2 by infrared spectroscopic ellipsometry and X-ray photoelectron spectroscopy. Physica E: Low-dimensional Systems and Nanostructures, 2007, 38 (1-2), pp.176-180. ⟨10.1016/j.physe.2006.12.032⟩. ⟨hal-01281492⟩
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