HIGH-K THIN FILMS AS DIELECTRIC TRANSDUCERS FOR FLEXURAL M/NEMS RESONATORS
Résumé
We show that a nanometer-thick high-K material can be used as an electromechanical transducer to actuate the flexural mode of micro/nanoresonators. In this study, a 15 nm silicon nitride layer is employed on top of 320 nm thick silicon beams. The devices, smaller by 2 orders of magnitude than in previous studies, are successfully driven into vibration at resonance frequencies greater than 1 MHz, nanometer amplitudes, and quality factors greater than 2,000 in vacuum. We also deduce the transduction efficiency from a thermomechanical displacement noise calibration. This work paves the way for efficient electromechanical transduction scheme at the nanoscale, which would be further strengthened by the use of high-K dielectric materials obtained by atomic layer deposition.
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