Temperature dependence of the switching field in all-perpendicular spin-valve nanopillars - Archive ouverte HAL
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2013

Temperature dependence of the switching field in all-perpendicular spin-valve nanopillars

Résumé

We present temperature dependent switching measurements of the Co/Ni multilayered free element of 75-nm-diameter spin-valve nanopillars. Angular dependent hysteresis measurements as well as switching field measurements taken at low temperature are in agreement with a model of thermal activation over a perpendicular anisotropy barrier. However, the statistics of switching (i.e. the mean switching field and the variance of the switching field distribution) from 20 up to 400 K are in disagreement with a Neel-Brown model that assumes a temperature independent barrier height and anisotropy field. We introduce a modified Neel-Brown model that fits the experimental data in which we attribute a T-3/2 dependence to the barrier height and the anisotropy field due to the temperature dependent magnetization and anisotropy energy.

Dates et versions

hal-01276629 , version 1 (19-02-2016)

Identifiants

Citer

D. B. Gopman, D. Bedau, G. Wolf, Stéphane Mangin, E. E. Fullerton, et al.. Temperature dependence of the switching field in all-perpendicular spin-valve nanopillars. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 88 (10), ⟨10.1103/PhysRevB.88.100401⟩. ⟨hal-01276629⟩
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