Silicon Monomer Formation and Surface Patterning of Si(001)-2 x 1 Following Tetraethoxysilane Dissociative Adsorption at Room Temperature - Archive ouverte HAL
Article Dans Une Revue Journal of Physical Chemistry C Année : 2014

Silicon Monomer Formation and Surface Patterning of Si(001)-2 x 1 Following Tetraethoxysilane Dissociative Adsorption at Room Temperature

Jean-Jacques Gallet
  • Fonction : Auteur
Fabrice Bournel
Debora Pierucci
Francois Rochet
  • Fonction : Auteur
Fabio Finocchi

Résumé

The adsorption of tetraethoxysilane (TEOS, Si[OC2H5](4)) on the Si(001)-2 x 1 surface at 300 K is studied through a joint experimental and theoretical approach, combining scanning tunneling microscopy (STM) and synchrotron radiation X-ray photoelectron spectroscopy (XPS) with first-principles simulations within the density functional theory (DFT). XPS shows that all Si-O bonds within the TEOS molecules are broken upon adsorption, releasing one Si atom per dissociated molecule, while the ethoxy (-OC2H5) groups form new Si-O bonds with surface Si dimers. A comparison between experimental STM images and DFT adsorption configurations shows that the four ethoxy groups bind to two second-neighbor silicon dimers within the same row, while the released silicon atom is captured as a monomer on an adjacent silicon dimer row. Additionally, the surface displays alternate ethoxy- and Si adatom-covered rows as TEOS coverage increases. This patterning, which spontaneously forms upon TEOS adsorption, can be used as a template for the nanofabrication of one-dimensional self-organized structures on Si(001)-2 x 1.
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Dates et versions

hal-01243089 , version 1 (14-12-2015)

Identifiants

Citer

Héloïse Tissot, Jean-Jacques Gallet, Fabrice Bournel, Ahmed Naitabdi, Debora Pierucci, et al.. Silicon Monomer Formation and Surface Patterning of Si(001)-2 x 1 Following Tetraethoxysilane Dissociative Adsorption at Room Temperature. Journal of Physical Chemistry C, 2014, 118 (4), pp.1887-1893. ⟨10.1021/jp407411k⟩. ⟨hal-01243089⟩
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