Structural coherency of epitaxial graphene on 3C-SiC(111) epilayers on Si(111) - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2010

Structural coherency of epitaxial graphene on 3C-SiC(111) epilayers on Si(111)

A. Ouerghi
R. Belkhou
  • Function : Author
M. G. Silly
  • Function : Author
S. El Moussaoui
  • Function : Author
L. Largeau
M. Portail
F. Sirotti
  • Function : Author

Abstract

Graphene has emerged as a promising nanoelectronic material in electronic devices applications and studying two-dimensional electron gases with relativistic dispersion near Dirac point. Nonetheless, the control of the preparation conditions for homogeneous large-area graphene layers is difficult. Here, we illustrate evidence for high structural and electronic quality epitaxial graphene on 3C-SiC(111). Morphology and electronic structure of the graphene layers have been analyzed with low energy electron microscopy and angle resolved photoemission spectroscopy. Using scanning tunneling microscopy and scanning transmission electron microscopy, we show that graphene exhibits remarkably continuity of step edges suggesting the possibility of growing large scale graphene layer. (C) 2010 American Institute of Physics. [doi:10.1063/1.3497287]
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hal-01240957 , version 1 (09-12-2015)

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A. Ouerghi, R. Belkhou, M. Marangolo, M. G. Silly, S. El Moussaoui, et al.. Structural coherency of epitaxial graphene on 3C-SiC(111) epilayers on Si(111). Applied Physics Letters, 2010, 97 (16), pp.161905. ⟨10.1063/1.3497287⟩. ⟨hal-01240957⟩
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