Evidence for Flat Bands near the Fermi Level in Epitaxial Rhombohedral Multilayer Graphene - Archive ouverte HAL Access content directly
Journal Articles ACS Nano Year : 2015

Evidence for Flat Bands near the Fermi Level in Epitaxial Rhombohedral Multilayer Graphene

Massimiliano Marangolo
Fausto Sirotti

Abstract

The stacking order of multilayer graphene has a profound influence on its electronic properties. In particular, it has been predicted that a rhombohedral stacking sequence displays a very flat conducting surface state: the longer the sequence, the flatter the band. In such a flat band, the role of electron electron correlation is enhanced, possibly resulting in high T-c superconductivity, magnetic order, or charge density wave order. Here we demonstrate that rhombohedral multilayers are easily obtained by epitaxial growth on 3C-S1C(111) on a 2 degrees off-axis 6H-SiC(0001). The resulting samples contain rhombohedral sequences of five layers on 70% of the surface. We confirm the presence of the flat band at the Fermi level by scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy, in close agreement with the predictions of density functional theory calculations.
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Dates and versions

hal-01240494 , version 1 (09-12-2015)

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Debora Pierucci, Haikel Sediri, Mahdi Hajlaoui, Jean-Christophe Girard, Thomas Brumme, et al.. Evidence for Flat Bands near the Fermi Level in Epitaxial Rhombohedral Multilayer Graphene. ACS Nano, 2015, 9 (5), pp.5432-5439. ⟨10.1021/acsnano.5b01239⟩. ⟨hal-01240494⟩
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