Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix - Archive ouverte HAL
Article Dans Une Revue Fizika i tekhnika poluprovodnicov / Semiconductors Année : 2009

Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix

A. N. Gruzintsev
  • Fonction : Auteur
G. A. Emelchenko
  • Fonction : Auteur
V. M. Masalov
  • Fonction : Auteur
E. E. Yakimov
  • Fonction : Auteur
Agnès Maitre

Résumé

The effect of the photonic band gap in the photonic crystal, the synthesized SiO(2) opal with embedded CdSe/ZnS quantum dots, on its luminescence in the visible spectral region is studied. It is shown that the position of the photonic band gap in the luminescence and reflectance spectra for the infiltrated opal depends on the diameter of the constituent nanospheres and on the angle of recording the signal. The optimal conditions for embedding the CdSe/ZnS quantum dots from the solution into the opal matrix are determined. It is found that, for the opal-CdSe/ZnS nanocomposites, the emission intensity decreases and the luminescence decay time increases in the spatial directions, in which the spectral positions of the photonic band gap and the luminescence peak of the quantum dots coincide.

Dates et versions

hal-01236826 , version 1 (02-12-2015)

Identifiants

Citer

A. N. Gruzintsev, G. A. Emelchenko, V. M. Masalov, E. E. Yakimov, Carlos Barthou, et al.. Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix. Fizika i tekhnika poluprovodnicov / Semiconductors, 2009, 43 (2), pp.197-201. ⟨10.1134/S1063782609020158⟩. ⟨hal-01236826⟩
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