Electronic excitation to low-lying states of GeF<sub>4</sub> molecule by electron impact: A comparative study with CF<sub>4</sub> and SiF<sub>4</sub> molecules - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Physics: Conference Series Année : 2015

Electronic excitation to low-lying states of GeF4 molecule by electron impact: A comparative study with CF4 and SiF4 molecules

Résumé

We report on the measurements of the electron impact electronic excitation cross sections for XF4 (X = C, Si and Ge) molecules at 100 eV, 5° scattering angle and 30 eV, 30° in the electron energy loss range 8.0 - 18 eV. For a target of GeF4 molecule, the optically-forbidden behavior has been observed in the lower electron energy loss range.

Dates et versions

hal-01230973 , version 1 (19-11-2015)

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Citer

S. Ohtomi, M Matsui, Y. Mochizuki, A Suga, M Hoshino, et al.. Electronic excitation to low-lying states of GeF4 molecule by electron impact: A comparative study with CF4 and SiF4 molecules. Journal of Physics: Conference Series, 2015, 635, pp.072041. ⟨10.1088/1742-6596/635/7/072041⟩. ⟨hal-01230973⟩
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